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Collector Emitter Breakdown Voltage Transistor. This parameter is the collector to base breakdown voltage of a bipolar transistor. Transistor voltages three different types of voltages are involved in the description of transistors and transistor circuits.
BD435 datasheet Specifications Transistor Type NPN from www.digchip.com
This parameter is the collector to base breakdown voltage of a bipolar transistor. So for me, reading this information, values larger than 400v would cause troubles to the bjt. Collector−emitter breakdown voltage (ic = 10 madc) v(br)ceo 50 − vdc collector−base cutoff current (vcb = 75 vdc) (vcb = 60 vdc) icbo − − 10 10 adc nadc emitter−base cutoff current (veb = 6.0 vdc) (veb = 4.0 vdc) iebo − − 10 10 adc nadc collector−emitter cutoff current (vce = 50 vdc) ices − 50 nadc on characteristics (note 1) dc current gain
Collector−Emitter Breakdown Voltage (Ic = 10 Madc) V(Br)Ceo 50 − Vdc Collector−Base Cutoff Current (Vcb = 75 Vdc) (Vcb = 60 Vdc) Icbo − − 10 10 Adc Nadc Emitter−Base Cutoff Current (Veb = 6.0 Vdc) (Veb = 4.0 Vdc) Iebo − − 10 10 Adc Nadc Collector−Emitter Cutoff Current (Vce = 50 Vdc) Ices − 50 Nadc On Characteristics (Note 1) Dc Current Gain
Vc doesn't state a reference. Since the beta is stated as 125, and the base current is calculated as 6.2ua, the collector current must be (6.2ua * 125).775ma. The knee is much sharper but the voltage varies widely from one device to another even within the same type.
On The Curve Tracer, Vc Is Applied By The Collector Supply.
The base is held open, and ic is sensed at the collector terminal. So for me, reading this information, values larger than 400v would cause troubles to the bjt. If voltages are fed to the transistor exceeding this rating, the transistor can be destroyed.
+V To Emitter, Collector Grounded) Is Roughly Equivalent To The Breakdown Between The Emitter And Base.
Thus, there are two junctions of the transistors. Thus, as there are three terminals of the transistor, i.e. Common, diffused transistors have high doping concentration in the emitter / base area, hence they break down fairly consistently at around 5volt in silicon.
Breakdown In The Opposite Direction (E.g.
Vbe, vce, vcb all of these voltages and their polarities are shown on figure 5 for the npn bjt. So if you have 12v on the collector to power something, the collector is only going to see 11.x volts at whatever current the load requires unless the bjt is being operated in the linear region and is limiting the current. Breakdown of the be junction does damage the transistor , the beta is permanently decreased every time this happens.
The Breakdown Voltage Depends On The Construction And Doping Of The Layers.
The maximum allowable voltage that a junction of a transistor can withstand is. On the curve tracer, vc is applied by the collector supply. All right so far, because the circuit is operating well, with full load and in universal input voltage range (85v to 264v).
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